The CHAC-3000 is an instrument that measures the Haze Pattern on the Si Wafer surface.
Crystal defects such as COP (Crystal Original Parts) , FPD (Flow Pattern Defects), OiSF (Oxygen Induced Stacking Fault) , and BMD (Bulk Micro Defects) have a significant impact on semiconductor in the process of growing single crystal silicon ingots or Si Wafer yield and quality
One of the ways to identify the defect area of these single crystal silicon wafers is the Cu-haze method.
After intentionally contaminating copper (Cu) on a single crystal silicon wafer, measure the crystal defect by checking how copper (Cu) is distributed inside or on the surface of the wafer according to the heat treatment conditions.
The CHAC-3000 (Cu-haze auto counter) is an equipment that loads and detects pre-treated silicon wafer samples (Cu contamination and heat treatment, etc.).
Detects Cu-haze defects on the surface and provides information about the defects.