The ECIS-3000 is an instrument that detects and measures defects in silicon wafer edges and haze patterns on silicon wafer surfaces. Crystal defects such as COP (Crystal Original Parts) , FPD (Flow Pattern Defects), OiSF (Oxygen Induced Stacking Fault) ,and BMD (Bulk Micro Defects) have a significant impact on semiconductor in the process of growing single crystal silicon ingots or Si Wafer yield and quality Defects in wafers such as Particle, Scratch, Chip, and Crack are the main causes of yield loss, and this process requires the use of a reliable and precise machine vision system. One of the ways to identify the defect area of these single crystal silicon wafers is the Cu-haze method. After intentionally contaminating copper (Cu) on a single crystal silicon wafer, measure the crystal defect by checking how copper (Cu) is distributed inside or on the surface of the wafer according to the heat treatment conditions. The ECIS-3000 is the equipment for loading pre-treated silicon wafer samples (Cu, etc.).
Detects Cu-haze defects on the surface and provides information about the defects.
The ECIS-3000 can inspect not only 300mm silicon wafers but also 200mm silicon wafers with simple manual operation.