The EDIS-3000 is an instrument that detects and measures COP(crystal originated pits) on edge defects and surfaces in silicon wafers.
Crystal defects such as COP (Crystal Original Parts) , OiSF (Oxygen Induced Stacking Fault) , and BMD (Bulk Micro Defects) have a significant impact on semiconductor in the process of growing single crystal silicon ingots or Si Wafer yield and quality
Defects in wafers such as Particle, Scratch, Chip, and Crack are the main causes of yield loss, and this process requires the use of a reliable and precise machine vision system.
The method for identifying the defect area of these single crystal silicon wafers is the DSOD (Direct Surface Oxide Defect) measurement system.
COP is a defect that degrades gate oxide integrity characteristics.
When the wafer is cooled below 1100°C, the access pores gather to form a size of 50 to 100nm in the crystal lattice. The DSOD analysis allows you to quickly and accurately detect the number and size of COPs.
The EDIS-3000 can detect COP defects on the surface of the 200mm silicon wafer as well as the 300mm silicon wafer with simple manual operation.